advanced power n-channel enhancement mode electronics corp. power mosfet simple drive requirement bv dss 100v lower on-resistance r ds(on) 6.5m fast switching characteristic i d 97a rohs compliant & halogen-free description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w p d @t a =25 w t stg t j symbol value units rthj-c maximum thermal resistance, junction-case 0.9 /w rthj-a maximum thermal resistance, junction-ambient 6 2 /w data and specifications subject to change without n otice 201312112 thermal data parameter 1 operating junction temperature range -55 to 150 drain current, v gs @ 10v 61 pulsed drain current 1 360 storage temperature range total power dissipation 138 -55 to 150 gate-source voltage + 20 drain current, v gs @ 10v 97 total power dissipation 2 ap92lt10gp-hf halogen-free product parameter rating drain-source voltage 100 g d s ap92lt10 series are from advanced power innovated design and silicon process technology to achieve the lowest possible o n- resistance and fast switching performance. it provides the designer with an extreme efficient device for use in a wide range of power applications. the to-220 package is widely preferred for all commercial- industrial through hole applications. the low thermal resi stance and low package cost contribute to the worldwide popula r package. g d s to-220(p)
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 100 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =40a - - 6.5 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 2 - 5 v g fs forward transconductance v ds =5v, i d =40a - 80 - s i dss drain-source leakage current v ds =80v, v gs =0v - - 25 ua i gss gate-source leakage v gs = + 20v, v ds =0v - - + 100 na q g total gate charge i d =40a - 145 232 nc q gs gate-source charge v ds =50v - 70 - nc q gd gate-drain ("miller") charge v gs =10v - 10 - nc t d(on) turn-on delay time v ds =50v - 35 - ns t r rise time i d =40a - 85 - ns t d(off) turn-off delay time r g =3.3 - 75 - ns t f fall time v gs =10v - 9 - ns c iss input capacitance v gs =0v - 14200 22720 pf c oss output capacitance v ds =50v - 400 - pf c rss reverse transfer capacitance f=1.0mhz - 30 - pf r g gate resistance f=1.0mhz - 2 4 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =40a, v gs =0v - - 1.3 v t rr reverse recovery time i s =10a, v gs =0 v , - 60 - ns q rr reverse recovery charge di/dt=100a/s - 125 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test this product is sensitive to electrostatic discharg e, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized . apec does not assume any liability arising out of t he application or use of any product or circuit des cribed herein; neither does it convey any license under it s patent rights, nor the rights of others. apec reserves the right to make changes without fur ther notice to any products herein to improve reliability, function or design. 2 ap92lt10gp-hf
fig 1. typical output characteristics fig 2. typical output characteristics fig 3. normalized bv dss v.s. junction fig 4. normalized on-re sistance temperature v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 ap92lt10gp-hf 0 40 80 120 160 200 0 2 4 6 8 10 v ds , drain-to-source voltage (v) i d , drain current (a) t c =150 o c 10v 9.0v 8.0v 7.0v v g =6.0v 0 90 180 270 360 0 4 8 12 16 20 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 9.0v 8.0v 7.0v v g = 6.0v 0.4 0.8 1.2 1.6 2.0 2.4 2.8 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =40a v g =10v 0 10 20 30 40 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 0.0 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 t j , junction temperature ( o c ) normalized v gs(th) i d =250ua 0.8 0.9 1 1.1 1.2 -50 0 50 100 150 t j , junction temperature ( o c) normalized bv dss i d =1ma
ap92lt10gp-hf fig 7. gate charge characteristics fig 8. typical capacitance characterist ics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. drain current v.s. case temperature fig 12. gate charge waveform 4 0 1 10 100 1000 0.1 1 10 100 1000 v ds ,drain-to-source voltage (v) i d (a) t c =25 o c single pulse 100us 1ms 10ms 100ms dc 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor = 0.5 single pulse 0 2 4 6 8 10 12 0 40 80 120 160 200 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =40a v ds =50v 0 4000 8000 12000 16000 20000 1 11 21 31 41 51 61 v ds ,drain-to-source voltage (v) c (pf) f=1.0mhz c iss c oss c rss q v g 10v q gs q gd q g charge operation in this area limited by r ds(on) 0 20 40 60 80 100 25 50 75 100 125 150 t c , case temperature ( o c ) i d , drain current (a)
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